|
Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 94, Issue 11, Pages 877–883
(Mi jetpl2394)
|
|
|
|
This article is cited in 14 scientific papers (total in 14 papers)
CONDENSED MATTER
Electro-optical trap for dipolar excitons in a GaAs/AlAs Schottky diode with a single quantum well
A. V. Gorbunova, V. B. Timofeeva, D. A. Deminb a Institute of Solid State Physics, Russian Academy of Sciences
b Moscow Institute of Physics and Technology
Abstract:
An electro-optical trap for spatially indirect dipolar excitons has been implemented in a GaAs/AlAs Schottky diode with a $400$-Å-wide single quantum well. In the presence of a bias voltage applied to a gate, the trap for excitons appears upon ring illumination of the structure by a continuous-wave or pulsed laser generating hot electron-hole pairs in the quantum well. A barrier for excitons collected inside the illuminated ring appears because of the screening of the applied electric field by nonequilibrium carriers directly in the excitation region. Excitons are collected inside the ring owing to the ambipolar drift of carriers and dipole-dipole exciton repulsion in the optical pump region. For dipolar excitons thus collected in the center of the ring electrooptical trap, a significant narrowing of the luminescence line that accompanies an increase in the density of excitations indicates the collective behavior of dipolar excitons.
Received: 31.10.2011
Citation:
A. V. Gorbunov, V. B. Timofeev, D. A. Demin, “Electro-optical trap for dipolar excitons in a GaAs/AlAs Schottky diode with a single quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:11 (2011), 877–883; JETP Letters, 94:11 (2011), 800–805
Linking options:
https://www.mathnet.ru/eng/jetpl2394 https://www.mathnet.ru/eng/jetpl/v94/i11/p877
|
Statistics & downloads: |
Abstract page: | 259 | Full-text PDF : | 58 | References: | 35 | First page: | 1 |
|