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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 79, Issue 11, Pages 657–659
(Mi jetpl2311)
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This article is cited in 20 scientific papers (total in 20 papers)
CONDENSED MATTER
Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses
S. I. Ashitkov, A. V. Ovchinnikov, M. B. Agranat Institute of Extremal States Thermophysics, Scientific Association for High Temperatures, Russian Academy of Sciences, Moscow
Abstract:
Experimental data are obtained on the dynamics of conduction-electron relaxation at the stage preceding the melting of a silicon surface layer. The energy of a quantum of probe radiation is smaller than the band gap, making it possible to obtain information about the electron-phonon relaxation processes for an electron concentration of $\sim10^{21}$cm$^{-3}$ in the conduction band.
Received: 31.03.2004
Citation:
S. I. Ashitkov, A. V. Ovchinnikov, M. B. Agranat, “Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:11 (2004), 657–659; JETP Letters, 79:11 (2004), 529–531
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https://www.mathnet.ru/eng/jetpl2311 https://www.mathnet.ru/eng/jetpl/v79/i11/p657
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Abstract page: | 414 | Full-text PDF : | 164 | References: | 44 |
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