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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 88, Issue 6, Pages 442–444
(Mi jetpl231)
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This article is cited in 14 scientific papers (total in 14 papers)
CONDENSED MATTER
Nonlinear refraction in nanocrystalline silicon carbide films
A. A. Borshcha, M. S. Brodyna, V. I. Volkova, V. I. Rudenkoa, V. R. Lyakhovetskiia, V. A. Semenovb, V. M. Puzikovb a Institute of Physics, National Academy of Sciences of Ukraine,
pr. Nauki 144, Kiev, 03028, Ukraine
b Institute of Single Crystals, National Academy of Sciences of Ukraine, Kharkov, 61001, Ukraine
Abstract:
Nonlinear refraction in nanocrystalline SiC films, which have been obtained using the method of direct deposition of carbon and silicon ions with an energy of 100 eV at substrate temperatures from 900 to 1150°C, has been investigated. It has been shown that the films exhibit a large third-order nonlinear susceptibility χ (3) ~ 10−6 esu (at λ = 1064 nm and τ p = 10 ns).
Received: 23.07.2008
Citation:
A. A. Borshch, M. S. Brodyn, V. I. Volkov, V. I. Rudenko, V. R. Lyakhovetskii, V. A. Semenov, V. M. Puzikov, “Nonlinear refraction in nanocrystalline silicon carbide films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:6 (2008), 442–444; JETP Letters, 88:6 (2008), 386–388
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https://www.mathnet.ru/eng/jetpl231 https://www.mathnet.ru/eng/jetpl/v88/i6/p442
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Abstract page: | 269 | Full-text PDF : | 94 | References: | 35 |
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