Abstract:
Magnetotransport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers were studied. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas.
Citation:
A. V. Goran, A. A. Bykov, A. K. Bakarov, J. C. Portal, “Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel pagnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:10 (2004), 608–611; JETP Letters, 79:10 (2004), 495–498