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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 79, Issue 10, Pages 608–611
(Mi jetpl2303)
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This article is cited in 6 scientific papers (total in 6 papers)
CONDENSED MATTER
Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel pagnetic field
A. V. Gorana, A. A. Bykova, A. K. Bakarova, J. C. Portalb a Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Grenoble High Magnetic Fields Laboratory, MPI-FKF and CNRS B.P.166, F-38042 Grenoble, France
Abstract:
Magnetotransport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers were studied. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas.
Received: 04.03.2004 Revised: 14.04.2004
Citation:
A. V. Goran, A. A. Bykov, A. K. Bakarov, J. C. Portal, “Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel pagnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:10 (2004), 608–611; JETP Letters, 79:10 (2004), 495–498
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https://www.mathnet.ru/eng/jetpl2303 https://www.mathnet.ru/eng/jetpl/v79/i10/p608
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Abstract page: | 183 | Full-text PDF : | 52 | References: | 29 |
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