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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 79, Issue 10, Pages 592–596
(Mi jetpl2300)
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This article is cited in 20 scientific papers (total in 20 papers)
CONDENSED MATTER
Energy distributions of photoelectrons emitted from $p$-GaN(Cs, O) with effective negative electron affinity
A. A. Pakhnevichab, V. V. Bakina, A. V. Yaz'kovb, G. È. Shaiblera, S. V. Sheveleva, O. E. Tereshchenkoab, A. S. Yaroshevicha, A. S. Terekhovab a Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
Abstract:
Energy distributions of photoelectrons emitted into vacuum from the valence band and the localized states in the energy gap of $p$-GaN(Cs, O) with effective negative electron affinity were studied. It is shown that the photothermal electron excitation from the localized states lying below the Fermi level in the energy gap of $p$-GaN(Cs, O) is the dominant photoemission mechanism at the low-energy photoemission threshold.
Received: 05.04.2004
Citation:
A. A. Pakhnevich, V. V. Bakin, A. V. Yaz'kov, G. È. Shaibler, S. V. Shevelev, O. E. Tereshchenko, A. S. Yaroshevich, A. S. Terekhov, “Energy distributions of photoelectrons emitted from $p$-GaN(Cs, O) with effective negative electron affinity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:10 (2004), 592–596; JETP Letters, 79:10 (2004), 479–483
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https://www.mathnet.ru/eng/jetpl2300 https://www.mathnet.ru/eng/jetpl/v79/i10/p592
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Abstract page: | 268 | Full-text PDF : | 75 | References: | 46 |
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