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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 79, Issue 8, Pages 448–451
(Mi jetpl2275)
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This article is cited in 49 scientific papers (total in 49 papers)
ATOMS, SPECTRA, RADIATIONS
Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium
A. V. Andrianov, A. O. Zahar'in, I. N. Yassievich, N. N. Zinov'ev Ioffe Physico-Technical Institute, Russian Academy of Sciences
Abstract:
The spectrum of spontaneous terahertz electroluminescence was obtained near the breakdown threshold of a shallow acceptor (Ga) in germanium. The emission spectra were recorded by the Fourier spectroscopy method at a temperature of ∼5.5–5.6 K. The emission spectrum exhibits narrow lines with maxima at ∼1.99 THz (8.2 meV) and ∼2.36 THz (9.7 meV), corresponding to the optical transitions of nonequilibrium holes from the excited impurity states to the ground state of impurity center. A broad line with a maximum at ∼3.15 THz (13 meV) corresponding to the hole transitions from the valence band to the impurity ground state is also seen in the spectrum. The contribution of the hole transitions from the states of the valence band increases upon an increase in the electric-field strength. Simultaneously, the optical transitions of nonequilibrium holes between the subbands of the valence band appear in the emission spectrum. The integral terahertz-emission power is ∼17 nW per 1 W of the input power.
Received: 04.03.2004
Citation:
A. V. Andrianov, A. O. Zahar'in, I. N. Yassievich, N. N. Zinov'ev, “Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:8 (2004), 448–451; JETP Letters, 79:8 (2004), 365–367
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https://www.mathnet.ru/eng/jetpl2275 https://www.mathnet.ru/eng/jetpl/v79/i8/p448
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Abstract page: | 320 | Full-text PDF : | 98 | References: | 40 |
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