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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 79, Issue 3, Pages 158–162
(Mi jetpl2224)
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This article is cited in 38 scientific papers (total in 38 papers)
CONDENSED MATTER
Magnetoresonant hardening of silicon single crystals
Yu. A. Osipyana, R. B. Morgunova, A. A. Baskakova, A. M. Orlovb, A. A. Skvortsovb, E. N. Inkinab, Y. Tanimotoc a Institute of Solid State Physics, Russian Academy of Sciences
b Ulyanovsk State University
c Institute for Molecular Science, 444-8585, Okazaki, Japan
Abstract:
A microwave magnetic field crossed with a static field was found to exert a resonance effect on the dislocation mobility in single crystals of $p$-type silicon. The frequency of alternating field and the magnitude of static magnetic field corresponding to the maximal crystal hardening satisfy conditions for EPR of structural defects. This is evidence that the primary elementary processes observed previously in magnetoplasticity effects (influence of a static magnetic field on plasticity) are spin-dependent in silicon crystals. The dislocation path detected EPR spectrum was found to be anisotropic.
Citation:
Yu. A. Osipyan, R. B. Morgunov, A. A. Baskakov, A. M. Orlov, A. A. Skvortsov, E. N. Inkina, Y. Tanimoto, “Magnetoresonant hardening of silicon single crystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:3 (2004), 158–162; JETP Letters, 79:3 (2004), 126–130
Linking options:
https://www.mathnet.ru/eng/jetpl2224 https://www.mathnet.ru/eng/jetpl/v79/i3/p158
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