Abstract:
An experimental study of the two-, three-, and four-terminal resistance of a ballistic wire is carried out. The wire is fabricated on the basis of high-mobility 2D electron gas in an AlGaAs/GaAs heterojunction. Different behavior of mesoscopic fluctuations of multiterminal resistances is observed depending on the gate voltage and magnetic field. At B=0.45 T, the four-terminal resistance drops almost to zero and features resembling a ballistic conductance quantization are observed.
Citation:
Z. D. Kvon, V. A. Tkachenko, A. E. Plotnikov, V. A. Sablikov, V. Renard, J. C. Portal, “Conductance of a multiterminal ballistic wire”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:1 (2004), 42–45; JETP Letters, 79:1 (2004), 36–39