Abstract:
The two-loop temperature hysteresis of integrated intensity of Raman scattering of light is explained theoretically for a line of frequency 50 cm−1−1 in a superconducting oxide Ba1−x1−xKxxBiO33 single crystal.
Citation:
A. P. Saiko, S. A. Markevich, “On the bistable behavior of a low-frequency Raman-active phonon line in superconducting oxide Ba1−x1−xKxxBiO33”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:6 (2004), 468–471; JETP Letters, 80:6 (2004), 413–416
\Bibitem{SaiMar04}
\by A.~P.~Saiko, S.~A.~Markevich
\paper On the bistable behavior of a low-frequency Raman-active phonon line in superconducting oxide Ba$_{1-x}$K$_x$BiO$_3$
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2004
\vol 80
\issue 6
\pages 468--471
\mathnet{http://mi.mathnet.ru/jetpl2124}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2004JETPL..80..413S}
\transl
\jour JETP Letters
\yr 2004
\vol 80
\issue 6
\pages 413--416
\crossref{https://doi.org/10.1134/1.1830659}
Linking options:
https://www.mathnet.ru/eng/jetpl2124
https://www.mathnet.ru/eng/jetpl/v80/i6/p468
This publication is cited in the following 2 articles:
Pudelko W.R., Krzton-Maziopa A., Lynnyk A., Puzniak R., Lawniczak-Jablonska K., Gawryluk D.J., Moszczynska D., Mizera J., Physica B, 591 (2020), 412226