S. V. Ovsyannikov, V. V. Shchennikov, A. Misiuk, “Thermoelectric properties of high-pressure silicon phases”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:6 (2004), 459–463; JETP Letters, 80:6 (2004), 405

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 80, Issue 6, Pages 459–463 (Mi jetpl2122)

This article is cited in 13 scientific papers (total in 13 papers)

CONDENSED MATTER

Thermoelectric properties of high-pressure silicon phases

S. V. Ovsyannikov^a, V. V. Shchennikov^a, A. Misiuk^b

^a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences
^b Institute of Electron Technology, PL-02-668 Warsaw, Poland

Full-text PDF (336 kB) Citations (13)

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Abstract: The thermo emf in Czochralski-grown silicon single crystals (Cz-Si) was experimentally studied in a range of pressures up to 20 GPa. The pressure dependences revealed phase transitions in the metallic phase of silicon, which passed from tetragonal to orthorhombic and then to hexagonal lattice. The high-pressure silicon phases, as well as the metallic high-pressure phases in A_NB_8−N semiconductors, possess conductivity of the hole type. As the pressure decreases, the emf behavior reveals transitions to the metastable phases Si-XII and Si-III. Preliminary thermobaric treatment of the samples at a pressure of up to 1.5 GPa and a temperature of T=50–650°C influences the thermoelectric properties of Cz-Si at high pressures.

Received: 03.06.2004
Revised: 12.07.2004

English version:
Journal of Experimental and Theoretical Physics Letters, 2004, Volume 80, Issue 6, Pages 405–409
DOI: https://doi.org/10.1134/1.1830657

Bibliographic databases:

Document Type: Article

PACS: 72.20.Pa

Language: Russian

Citation: S. V. Ovsyannikov, V. V. Shchennikov, A. Misiuk, “Thermoelectric properties of high-pressure silicon phases”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:6 (2004), 459–463; JETP Letters, 80:6 (2004), 405–409

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https://www.mathnet.ru/eng/jetpl2122

https://www.mathnet.ru/eng/jetpl/v80/i6/p459

This publication is cited in the following 13 articles:

Shchennikov V.V., Shchennikov V.V., Streltsov S.V., Korobeynikov I.V., Ovsyannikov S.V., J. Electron. Mater., 42:7 (2013), 2249–2256
Shchennikov V.V., Shchennikov V.V., Streltsov S.V., Korobeynikov I.V., Morozova N.V., Ovsyannikov S.V., Micromachining and Microfabrication Process Technology XVIII, Proceedings of SPIE, 8612, eds. Maher M., Resnick P., SPIE-Int Soc Optical Engineering, 2013, 86120K
V.V. Shchennikov, Vs.V. Shchennikov, I.V. Korobeynikov, N.V. Morozova, Acta Phys. Pol. A, 124:2 (2013), 244
Sorella S., Casula M., Spanu L., Dal Corso A., Physical Review B, 83:7 (2011), 075119
JETP Letters, 85:4 (2007), 203–207
Ovsyannikov S.V., Shchennikov V.V., Antonova I.V., Shchennikov Jr. Vsevolod V., Ponosov Yu.S., Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process., 462:1-2, SI (2007), 343–346
Shchennikov Jr. Vsevolod V., Ovsyannikov S.V., Shchennikov V.V., Shaidarova N.A., Misiuk A., Smirnov S.V., Yang D., Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process., 462:1-2, SI (2007), 347–350
Shchennikov V.V., Ovsyannikov S.V., Phys. Status Solidi B-Basic Solid State Phys., 244:1 (2007), 437–442
JETP Letters, 84:1 (2006), 21–26
Kozlenko D.P., Ovsyannikov S.V., Shchennikov V.V., Jirak Z., Savenko B.N., Physics of the Solid State, 48:9 (2006), 1741–1745
Ovsyannikov S., Shchennikov V., Antonova I., Shchennikov V., Shamin S., Phys. Solid State, 48:1 (2006), 47–50
S. V. Ovsyannikov, V. V. Shchennikov, B. N. Goshchitskii, JETP Letters, 81:4 (2005), 167–170
Ovsyannikov S., Shchennikov V., Kar'kin A., Goshchitskii B., J. Phys.-Condes. Matter, 17:40, SI (2005), S3179–S3183

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