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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 80, Issue 2, Pages 143–149
(Mi jetpl2065)
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This article is cited in 36 scientific papers (total in 36 papers)
SCIENTIFIC SUMMARIES
Problem of impurity states in narrow-gap lead telluride-based semiconductors
L. I. Ryabova, D. R. Khokhlov M. V. Lomonosov Moscow State University
Abstract:
A review of recent results of experimental investigations devoted to studying unusual properties of impurity states in doped narrow-gap lead telluride-based semiconductors is presented. These results are analyzed in the framework of existing theoretical concepts.
Received: 09.06.2004
Citation:
L. I. Ryabova, D. R. Khokhlov, “Problem of impurity states in narrow-gap lead telluride-based semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:2 (2004), 143–149; JETP Letters, 80:2 (2004), 133–139
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https://www.mathnet.ru/eng/jetpl2065 https://www.mathnet.ru/eng/jetpl/v80/i2/p143
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Abstract page: | 309 | Full-text PDF : | 132 | References: | 38 |
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