Yu. N. Khanin, E. E. Vdovin, “Spin splitting of X-valley-related donor impurity states in an AlAs barrier”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:2 (2004), 130–133; JETP Letters, 80:2 (2004), 120

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2004, Volume 80, Issue 2, Pages 130–133 (Mi jetpl2062)

CONDENSED MATTER

Spin splitting of X-valley-related donor impurity states in an AlAs barrier

Yu. N. Khanin, E. E. Vdovin

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences

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Abstract: Magnetotunneling spectroscopy is used to reveal the spin splitting of the ground state of Si donors related to the X valley in an AlAs barrier. The absolute effective values of the longitudinal and transverse g factors in the AlAs barrier are found to be equal to 1.82±0.15 and 1.11±0.12, respectively.

Received: 31.05.2004
Revised: 08.06.2004

English version:
Journal of Experimental and Theoretical Physics Letters, 2004, Volume 80, Issue 2, Pages 120–123
DOI: https://doi.org/10.1134/1.1804221

Bibliographic databases:

Document Type: Article

PACS: 71.55.Eq, 71.70.Ej, 73.20.Hb, 73.40.Gk

Language: Russian

Citation: Yu. N. Khanin, E. E. Vdovin, “Spin splitting of X-valley-related donor impurity states in an AlAs barrier”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:2 (2004), 130–133; JETP Letters, 80:2 (2004), 120–123

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