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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 94, Issue 3, Pages 220–223 (Mi jetpl1978)  
This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Study of the atomic and electronic structures of amorphous silicon nitride and defects in it

S. S. Nekrashevich

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
Full-text PDF (493 kB) Citations (7)
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Abstract: The structure of amorphous silicon nitride obtained by cooling from a melt has been simulated by Car-Parinello molecular dynamics. Several types of Si-Si defect coordination have been revealed. It has been found that, in addition to normal Si-Si bonds, numerous double Si-Si bonds (Si-Si-Si defects) are present in the amorphous structure.
Received: 08.07.2010
Revised: 06.06.2011
English version:
Journal of Experimental and Theoretical Physics Letters, 2011, Volume 94, Issue 3, Pages 202–205
DOI: https://doi.org/10.1134/S0021364011150082
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. S. Nekrashevich, “Study of the atomic and electronic structures of amorphous silicon nitride and defects in it”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:3 (2011), 220–223; JETP Letters, 94:3 (2011), 202–205
Citation in format AMSBIB
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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