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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 94, Issue 3, Pages 220–223
(Mi jetpl1978)
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This article is cited in 7 scientific papers (total in 7 papers)
CONDENSED MATTER
Study of the atomic and electronic structures of amorphous silicon nitride and defects in it
S. S. Nekrashevich A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
Abstract:
The structure of amorphous silicon nitride obtained by cooling from a melt has been simulated by Car-Parinello molecular dynamics. Several types of Si-Si defect coordination have been revealed. It has been found that, in addition to normal Si-Si bonds, numerous double Si-Si bonds (Si-Si-Si defects) are present in the amorphous structure.
Received: 08.07.2010 Revised: 06.06.2011
Citation:
S. S. Nekrashevich, “Study of the atomic and electronic structures of amorphous silicon nitride and defects in it”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:3 (2011), 220–223; JETP Letters, 94:3 (2011), 202–205
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https://www.mathnet.ru/eng/jetpl1978 https://www.mathnet.ru/eng/jetpl/v94/i3/p220
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Abstract page: | 306 | Full-text PDF : | 88 | References: | 52 |
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