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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 93, Issue 8, Pages 499–504 (Mi jetpl1883)  
CONDENSED MATTER

Single-particle relaxation time of the two-dimensional electron gas in Si/SiGe: many-body effects

A. Goldab

a Université Paul Sabatier, Toulouse
b Centre d'Elaboration de Matériaux et d'Etudes Structurales, Toulouse
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Abstract: The single-particle relaxation time of the two-dimensional electron gas in SiGe/Si/SiGe quantum wells is calculated. Many-body effects beyond the random-phase approximation become important at low electron density. For charged impurity scattering (remote doped) we analyze the importance of these many-body effects as function of the electron density and the spacer width. Induced by many-body effects a strong reduction of the single-particle relaxation time at low electron density is predicted. We describe the relation with the transport scattering time, we comment on multiple-scattering effects and we discuss the determination of many-body effects in existing samples.
Received: 15.02.2011
Revised: 15.03.2011
English version:
Journal of Experimental and Theoretical Physics Letters, 2011, Volume 93, Issue 8, Pages 453–458
DOI: https://doi.org/10.1134/S002136401108008X
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. Gold, “Single-particle relaxation time of the two-dimensional electron gas in Si/SiGe: many-body effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:8 (2011), 499–504; JETP Letters, 93:8 (2011), 453–458
Citation in format AMSBIB
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\pages 499--504
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