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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 93, Issue 4, Pages 217–220
(Mi jetpl1835)
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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Cotunneling effects in GaAs vertical double quantum dots
A. O. Badrutdinova, S. M. Huangb, K. Konob, K. Onob, D. A. Tayurskiia a Institute of Physics, Kazan (Volga region) Federal University
b Low Temperature Physics Laboratory, Advanced Science Institute, RIKEN
Abstract:
We report observation of Coulomb blockade lifting in GaAs vertical double quantum dot caused by cotunneling processes. One characteristic feature of investigated sample is relatively low potential barriers between dots and reservoirs, which makes cotunneling processes favorable. The measurement of current through the sample under variable bias and gate voltages was carried out at temperature of dilution refrigerator 10 mK. Several distinct features, specific to double dot, were observed and appropriate explanation for them was given.
Received: 19.11.2010 Revised: 11.01.2011
Citation:
A. O. Badrutdinov, S. M. Huang, K. Kono, K. Ono, D. A. Tayurskii, “Cotunneling effects in GaAs vertical double quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:4 (2011), 217–220; JETP Letters, 93:4 (2011), 199–202
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https://www.mathnet.ru/eng/jetpl1835 https://www.mathnet.ru/eng/jetpl/v93/i4/p217
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Abstract page: | 200 | Full-text PDF : | 61 | References: | 44 |
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