Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 93, Issue 1, Pages 13–17 (Mi jetpl1796)  
This article is cited in 11 scientific papers (total in 11 papers)

CONDENSED MATTER

Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate

A. A. Zhukova, Ch. Volkb, A. Windenbc, H. Hardtdegenbc, Th. Schäpersb

a Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
b Institute of Bio- and Nanosystems (IBN-1): Semiconductor Nanoelectronics, Juelich, Germany
c JARA-Fundamentals of Future Information Technology, Research Centre Jülich, 52425 Jülich Germany
Full-text PDF (1189 kB) Citations (11)
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Abstract: We investigate the conductance of the InAs nanowire in the presence of electrical potential created by AFM scanning gate. At helium temperature Coulomb blockade diamonds pattern give the same result for quantum dot sizes ratio as reveals scanning gate imaging. The essential influence of local electrical field direction on the tunneling rate through the weak junction in InAs wire is observed. To explain this behavior the redistribution of the electrons among conductive channels in the wire must be taken into account.
Received: 01.11.2010
Revised: 19.11.2010
English version:
Journal of Experimental and Theoretical Physics Letters, 2011, Volume 93, Issue 1, Pages 10–14
DOI: https://doi.org/10.1134/S0021364011010103
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. A. Zhukov, Ch. Volk, A. Winden, H. Hardtdegen, Th. Schäpers, “Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:1 (2011), 13–17; JETP Letters, 93:1 (2011), 10–14
Citation in format AMSBIB
\Bibitem{ZhuVolWin11}
\by A.~A.~Zhukov, Ch.~Volk, A.~Winden, H.~Hardtdegen, Th.~Sch\"apers
\paper Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2011
\vol 93
\issue 1
\pages 13--17
\mathnet{http://mi.mathnet.ru/jetpl1796}
\transl
\jour JETP Letters
\yr 2011
\vol 93
\issue 1
\pages 10--14
\crossref{https://doi.org/10.1134/S0021364011010103}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000288711700003}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-79953007779}
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    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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