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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 93, Issue 1, Pages 13–17
(Mi jetpl1796)
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This article is cited in 11 scientific papers (total in 11 papers)
CONDENSED MATTER
Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate
A. A. Zhukova, Ch. Volkb, A. Windenbc, H. Hardtdegenbc, Th. Schäpersb a Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
b Institute of Bio- and Nanosystems (IBN-1): Semiconductor Nanoelectronics, Juelich, Germany
c JARA-Fundamentals of Future Information Technology, Research Centre Jülich, 52425 Jülich Germany
Abstract:
We investigate the conductance of the InAs nanowire in the presence of electrical potential created by AFM scanning gate. At helium temperature Coulomb blockade diamonds pattern give the same result for quantum dot sizes ratio as reveals scanning gate imaging. The essential influence of local electrical field direction on the tunneling rate through the weak junction in InAs wire is observed. To explain this behavior the redistribution of the electrons among conductive channels in the wire must be taken into account.
Received: 01.11.2010 Revised: 19.11.2010
Citation:
A. A. Zhukov, Ch. Volk, A. Winden, H. Hardtdegen, Th. Schäpers, “Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:1 (2011), 13–17; JETP Letters, 93:1 (2011), 10–14
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https://www.mathnet.ru/eng/jetpl1796 https://www.mathnet.ru/eng/jetpl/v93/i1/p13
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Abstract page: | 308 | Full-text PDF : | 68 | References: | 79 |
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