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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 10, Pages 646–649
(Mi jetpl1755)
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This article is cited in 42 scientific papers (total in 42 papers)
CONDENSED MATTER
Magnetophonon resonance in a GaAs quantum well with AlAs/GaAs superlattice barriers at high filling factors
A. A. Bykov, A. K. Kalagin, A. K. Bakarov A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
Abstract:
The magnetotransport of a high-mobility 2D electron gas in single GaAs quantum wells with AlAs/GaAs superlattice barriers is studied at high filling factors. For the selectively doped structures under study in the temperature range from 10 to 25 K, magnetoresistance oscillations periodic in the inverse magnetic field are observed with their frequency being proportional to the Fermi wave vector of the 2D electron gas. The experimental results are explained by the interaction of the 2D electron gas with leaky interface acoustic phonons.
Received: 21.04.2005
Citation:
A. A. Bykov, A. K. Kalagin, A. K. Bakarov, “Magnetophonon resonance in a GaAs quantum well with AlAs/GaAs superlattice barriers at high filling factors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005), 646–649; JETP Letters, 81:10 (2005), 523–526
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https://www.mathnet.ru/eng/jetpl1755 https://www.mathnet.ru/eng/jetpl/v81/i10/p646
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Abstract page: | 195 | Full-text PDF : | 66 | References: | 38 |
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