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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 10, Pages 636–641
(Mi jetpl1753)
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This article is cited in 22 scientific papers (total in 22 papers)
CONDENSED MATTER
Giant injection magnetoresistance in gallium arsenide/granulated film heterostructures with nanosize cobalt inclusions
L. V. Lutseva, A. I. Stogniib, N. N. Novitskiic a Ferrite Domen Co., St. Petersburg
b Minsk Research Institute of Radiomaterials
c Institute of Solid State Physics and Semiconductors NASB, Minsk
Abstract:
Electron transport has been studied in the gallium arsenide/granulated SiO2 film heterostructure with Co nanoparticles and in the gallium arsenide/TiO2 film heterostructure with Co island sublayers. When electrons are injected from a film into a semiconductor, a new phenomenon is observed, which is called injection magnetoresistance. For the SiO2(Co)/GaAs structure with 60 at. % Co in a magnetic field of 23 kOe at a voltage of 50 V, the injection magnetoresistance reaches 5200% at room temperature.
Received: 25.03.2005 Revised: 15.04.2005
Citation:
L. V. Lutsev, A. I. Stognii, N. N. Novitskii, “Giant injection magnetoresistance in gallium arsenide/granulated film heterostructures with nanosize cobalt inclusions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005), 636–641; JETP Letters, 81:10 (2005), 514–518
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https://www.mathnet.ru/eng/jetpl1753 https://www.mathnet.ru/eng/jetpl/v81/i10/p636
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Abstract page: | 368 | Full-text PDF : | 97 | References: | 56 |
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