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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 8, Pages 474–477
(Mi jetpl1725)
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This article is cited in 6 scientific papers (total in 6 papers)
CONDENSED MATTER
Instability of interstitial dislocation loops in electron-irradiated dielectrics
A. I. Ryazanov, A. V. Klaptsov Russian Research Centre "Kurchatov Institute", Moscow
Abstract:
The experiments on electron irradiation of yttrium-stabilized zirconium oxide samples show the formation of strong elastic fields near interstitial dislocation loops. The fields increase with an increase in the loop radius and, when the loop radius reaches a certain critical value, the loops became unstable due to the beginning of plastic deformation and the formation of a dislocation network. The mechanism of the occurrence of this instability is suggested. It is based on the accumulation of charges at dislocation loops due to ionization processes in an electron-irradiated dielectric. It is shown that the accumulation of the electric charge at growing dislocation loops in dielectrics may be responsible for an increase in elastic stresses near dislocation loops and for their instability because of the beginning of plastic deformation near the loops when stresses at growing loops become close to the theoretical yield stress of the material.
Received: 15.03.2005
Citation:
A. I. Ryazanov, A. V. Klaptsov, “Instability of interstitial dislocation loops in electron-irradiated dielectrics”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:8 (2005), 474–477; JETP Letters, 81:8 (2005), 383–386
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https://www.mathnet.ru/eng/jetpl1725 https://www.mathnet.ru/eng/jetpl/v81/i8/p474
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