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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 11, Pages 834–838
(Mi jetpl1640)
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This article is cited in 22 scientific papers (total in 22 papers)
CONDENSED MATTER
Effect of intrinsic defects on the electronic structure of BN nanotubes
A. Yu. Golovacheva, P. N. D'yachkov Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Abstract:
The effect of intrinsic defects on the electronic structure of boron-nitrogen nanotubes (5, 5) and (9, 0) is investigated by the method of linearized associated cylindrical waves. Nanotubes with extended defects of substitution N B of a boron atom by a nitrogen atom and, vice versa, nitrogen by boron B N with an impurity concentration of 1.5 to 5% are considered. It is shown that the presence of such defects significantly affects the band structure of boron-nitrogen nanotubes. A defect band D π(B, N) is formed in the bandgap, which sharply reduces the width of the gap. The presence of impurities also affects the valence band: the widths of s, sp, and p π bands change and the gap between s and sp bands is partially filled. These effects may be detected experimentally by, e.g., optical and photoelectron spectroscopy.
Received: 09.11.2005
Citation:
A. Yu. Golovacheva, P. N. D'yachkov, “Effect of intrinsic defects on the electronic structure of BN nanotubes”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:11 (2005), 834–838; JETP Letters, 82:11 (2005), 737–741
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https://www.mathnet.ru/eng/jetpl1640 https://www.mathnet.ru/eng/jetpl/v82/i11/p834
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Abstract page: | 207 | Full-text PDF : | 78 | References: | 23 |
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