|
Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 10, Pages 747–751
(Mi jetpl1626)
|
|
|
|
This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow
E. I. Lonskayaa, O. A. Ryabushkinab a Institute of Radioengineering and Electronics of Russian Academy of Sciences, Fryazino Department
b Moscow Institute of Physics and Technology
Abstract:
Photoreflectance spectra of selectively doped GaAs/AlGaAs heterostructures are studied under the conditions of direct current flow along the structure layers. Using a model developed for the spectra, variations of the internal transverse electric fields are calculated for longitudinal current flow. It is proved experimentally that even a weak heating of electrons in such structures leads to a spatial redistribution of electrons in the direction transverse to the heterostructure layers.
Received: 17.10.2005
Citation:
E. I. Lonskaya, O. A. Ryabushkin, “Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:10 (2005), 747–751; JETP Letters, 82:10 (2005), 664–668
Linking options:
https://www.mathnet.ru/eng/jetpl1626 https://www.mathnet.ru/eng/jetpl/v82/i10/p747
|
|