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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 10, Pages 747–751 (Mi jetpl1626)  
This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow

E. I. Lonskayaa, O. A. Ryabushkinab

a Institute of Radioengineering and Electronics of Russian Academy of Sciences, Fryazino Department
b Moscow Institute of Physics and Technology
Full-text PDF (637 kB) Citations (4)
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Abstract: Photoreflectance spectra of selectively doped GaAs/AlGaAs heterostructures are studied under the conditions of direct current flow along the structure layers. Using a model developed for the spectra, variations of the internal transverse electric fields are calculated for longitudinal current flow. It is proved experimentally that even a weak heating of electrons in such structures leads to a spatial redistribution of electrons in the direction transverse to the heterostructure layers.
Received: 17.10.2005
English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 82, Issue 10, Pages 664–668
DOI: https://doi.org/10.1134/1.2166916
Bibliographic databases:
Document Type: Article
PACS: \vspace*{-3mm}73.40.Kp, 78.40.Fy, 78.66.Fd
Language: Russian
Citation: E. I. Lonskaya, O. A. Ryabushkin, “Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:10 (2005), 747–751; JETP Letters, 82:10 (2005), 664–668
Citation in format AMSBIB
\Bibitem{LonRya05}
\by E.~I.~Lonskaya, O.~A.~Ryabushkin
\paper Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2005
\vol 82
\issue 10
\pages 747--751
\mathnet{http://mi.mathnet.ru/jetpl1626}
\transl
\jour JETP Letters
\yr 2005
\vol 82
\issue 10
\pages 664--668
\crossref{https://doi.org/10.1134/1.2166916}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000234812000010}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-31344451869}
Linking options:
  • https://www.mathnet.ru/eng/jetpl1626
  • https://www.mathnet.ru/eng/jetpl/v82/i10/p747
    • This publication is cited in the following 4 articles:
    1. Carlindo Vitoriano, Braz J Phys, 51:3 (2021), 850  crossref
    2. V.V. Vainberg, A.S. Pylypchuk, V.N. Poroshin, Sarbey O.G. Sarbey O.G., Ukr. J. Phys., 59:7 (2014), 721  crossref
    3. Ryabushkin O.A., Lonskaya E.I., Physics of Semiconductors, AIP Conference Proceedings, 893, 2007, 1499–1500  crossref  adsnasa  isi  scopus
    4. Lonskaya E., Ryabushkin O., Phys. Status Solidi A-Appl. Mat., 204:2 (2007), 343–353  crossref  adsnasa  isi  elib  scopus
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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    References:47
     
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