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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 5, Pages 331–335 (Mi jetpl1557)  
This article is cited in 6 scientific papers (total in 6 papers)

CONDENSED MATTER

Effects of electron-phonon interaction in tunneling processes in nanostructures

P. I. Arseyeva, N. S. Maslovab

a P. N. Lebedev Physical Institute, Russian Academy of Sciences
b Department of Physics, Moscow State University
Full-text PDF (188 kB) Citations (6)
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Abstract: Tunneling through a system with two discrete electron levels coupled by electron-phonon interaction is considered. The interplay between elastic and inelastic tunneling channels is analyzed not only for weak electron-phonon coupling but also for strong coupling in resonant case. It is shown that intensity and width of peaks in tunneling conductivity is strongly influenced by non equilibrium effects.
Received: 12.07.2005
English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 82, Issue 5, Pages 297–301
DOI: https://doi.org/10.1134/1.2130916
Bibliographic databases:
Document Type: Article
PACS: 73.40.Gk, 73.63.-b
Language: English
Citation: P. I. Arseyev, N. S. Maslova, “Effects of electron-phonon interaction in tunneling processes in nanostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005), 331–335; JETP Letters, 82:5 (2005), 297–301
Citation in format AMSBIB
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    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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