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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 92, Issue 12, Pages 872–876
(Mi jetpl1491)
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This article is cited in 5 scientific papers (total in 5 papers)
CONDENSED MATTER
Tunneling Hall Effect
P. S. Alekseev Ioffe Physico-Technical Institute, St. Petersburg, Russia
Abstract:
Electron tunneling in a semiconductor heterostructure with a barrier in a weak magnetic field applied parallel to the barrier interfaces is analyzed theoretically. A novel mechanism of the Hall effect in this structure is suggested. It is shown that the Hall current in the vicinity of the wide enough barrier is determined by the orbital effect of the magnetic field on the electron motion under the barrier, rather than by the electron $\vec{\mathcal E}\times\vec{\mathcal H}$-drift and scattering in the conductive regions lying to the left and to the right of the barrier.
Received: 04.10.2010 Revised: 27.10.2010
Citation:
P. S. Alekseev, “Tunneling Hall Effect”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:12 (2010), 872–876; JETP Letters, 92:12 (2010), 788–792
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https://www.mathnet.ru/eng/jetpl1491 https://www.mathnet.ru/eng/jetpl/v92/i12/p872
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Abstract page: | 251 | Full-text PDF : | 74 | References: | 41 |
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