M. P. Trushin, A. L. Chudnovskiy, “Curved One-Dimensional Wire with Rashba Coupling as a Spin Switch”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:8 (2006), 376–379; JETP Letters, 83:8 (2006), 318

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2006, Volume 83, Issue 8, Pages 376–379 (Mi jetpl1282)

This article is cited in 11 scientific papers (total in 11 papers)

CONDENSED MATTER

Curved One-Dimensional Wire with Rashba Coupling as a Spin Switch

M. P. Trushin, A. L. Chudnovskiy

Institut für Theoretische Physik, Universität Hamburg, D-20355 Hamburg, Germany

Full-text PDF (639 kB) Citations (11)

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Abstract: We propose a semiconductor structure that can switch the electron spin using the interplay between the Rashba effect and geometry of the system. In detail, the structure consists of a strongly curved one-dimensional ballistic wire with intrinsic spin-orbit interactions. Here, in contrast to the previous proposals based on the straight quantum channels, the spin-switching is achievable even if the electrons are in the eigen state and spin-precession does not occur. Using parameters relevant for InAs we investigate the tunability of this effect by means of external electric and magnetic fields.

Received: 15.02.2006

English version:
Journal of Experimental and Theoretical Physics Letters, 2006, Volume 83, Issue 8, Pages 318–322
DOI: https://doi.org/10.1134/S0021364006080042

Bibliographic databases:

Document Type: Article

PACS: 72.25.Dc, 73.23.Ad, 73.63.Nm

Language: English

Citation: M. P. Trushin, A. L. Chudnovskiy, “Curved One-Dimensional Wire with Rashba Coupling as a Spin Switch”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:8 (2006), 376–379; JETP Letters, 83:8 (2006), 318–322

Citation in format AMSBIB

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Linking options:

https://www.mathnet.ru/eng/jetpl1282

https://www.mathnet.ru/eng/jetpl/v83/i8/p376

This publication is cited in the following 11 articles:

Lia J.M., Tamborenea P.I., Physica E, 126 (2021), 114419
Ganichev S.D. Trushin M. Schliemann J., Spintronics Handbook: Spin Transport and Magnetism, Vol 2: Semiconductor Spintronics, 2Nd Edition, ed. Tsymbal E. Zutic I., Crc Press-Taylor & Francis Group, 2019, 317–338
Siu Zh.B., Jalil M.B.A., Tan S.G., J. Appl. Phys., 121:23 (2017), 233902
Baldo Iii C., Villagonzalo C., Physica E, 83 (2016), 498–504
Kammermeier M., Wenk P., Schliemann J., Heedt S., Schaepers T., Phys. Rev. B, 93:20 (2016), 205306
Baldo Iii C., Villagonzalo C., Physica E, 63 (2014), 93–98
Siu Zh.B., Jalil M.B.A., Tan S.G., J. Appl. Phys., 115:17 (2014), 17C513
Liu M.-H., Wu J.-Sh., Chen S.-H., Chang Ch.-R., Physical Review B, 84:8 (2011), 085307
Karen Peters, Stefan Mendach, Wolfgang Hansen, NanoScience and Technology, Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals, 2010, 25
Trushin M., Schliemann J., New Journal of Physics, 9 (2007), 346
Zhang E., Zhang Sh., Wang Q., Physical Review B, 75:8 (2007), 085308

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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