A. A. Maksimov, I. I. Tartakovskii, D. R. Yakovlev, M. Bayer, A. Waag, “Picosecond carrier relaxation in type-II ZnSe/BeTe heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006), 173–177; JETP Letters, 83:4 (2006), 141

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2006, Volume 83, Issue 4, Pages 173–177 (Mi jetpl1246)

This article is cited in 17 scientific papers (total in 17 papers)

CONDENSED MATTER

Picosecond carrier relaxation in type-II ZnSe/BeTe heterostructures

A. A. Maksimov^a, I. I. Tartakovskii^a, D. R. Yakovlev^b, M. Bayer^b, A. Waag^c

^a Institute of Solid State Physics, Russian Academy of Sciences
^b Experimentelle Physik II, University of Dortmund, D-44227 Dortmund, Germany
^c Institute of Semiconductor Technology, Braunschweig Technical University, D-38106 Braunschweig, Germany

Full-text PDF (733 kB) Citations (17)

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Abstract: Relaxation of photoexcited carriers in the course of the formation of spatially separated layers of electrons and holes in type-II ZnSe/BeTe heterostructures has been studied based on a high time resolution investigation of fast luminescence kinetics. The hole escape times τ from the ZnSe layer have been measured in structures with different ZnSe layer thicknesses (τ = 2.5, 7.5, and 23 ps for thicknesses d = 10, 15, and 20 nm, respectively). It is shown that the increase in the time τ can be explained by the fact that the escape rate of photoexcited holes from the lowest above-barrier level in the ZnSe layer into the BeTe layer decreases as the thickness of the ZnSe layer increases.

Received: 27.12.2005

English version:
Journal of Experimental and Theoretical Physics Letters, 2006, Volume 83, Issue 4, Pages 141–145
DOI: https://doi.org/10.1134/S0021364006040035

Bibliographic databases:

Document Type: Article

PACS: 73.21.-b, 78.66.Hf, 78.67.De

Language: Russian

Citation: A. A. Maksimov, I. I. Tartakovskii, D. R. Yakovlev, M. Bayer, A. Waag, “Picosecond carrier relaxation in type-II ZnSe/BeTe heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006), 173–177; JETP Letters, 83:4 (2006), 141–145

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https://www.mathnet.ru/eng/jetpl1246

https://www.mathnet.ru/eng/jetpl/v83/i4/p173

This publication is cited in the following 17 articles:

A. A. Maksimov, E. V. Filatov, I. I. Tartakovskii, D. R. Yakovlev, A. Waag, JETP Letters, 110:12 (2019), 799–803
Debus J. Maksimov A.A. Dunker D. Yakovlev D.R. Filatov E.V. Tartakovskii I.I. Ivanov V.Yu. Waag A. Bayer M., Phys. Status Solidi B-Basic Solid State Phys., 251:9, SI (2014), 1694–1699
Ji Zi-Wu, Zheng Yu-Jun, Xu Xian-Gang, Acta Phys Sinica, 60:4 (2011), 047805
E. V. Filatov, A. A. Maksimov, I. I. Tartakovskii, D. R. Yakovlev, A. Waag, JETP Letters, 94:12 (2011), 858–862
Mino H., Yonaiyama S., Ohto K., Akimoto R., Applied Physics Letters, 99:16 (2011), 161901
Debus J., Maksimov A.A., Dunker D., Yakovlev D.R., Tartakovskii I.I., Waag A., Bayer M., Physical Review B, 82:8 (2010), 085448
Maksimov A.A., Yakovlev D.R., Debus J., Tartakovskii I.I., Waag A., Karczewski G., Wojtowicz T., Kossut J., Bayer M., Physical Review B, 82:3 (2010), 035211
Filatov E.V., Zaitsev S.V., Tartakovskii I.I., Maksimov A.A., Yakovlev D.R., Waag A., Physica Status Solidi C, Current Topics in Solid State Physics, 7:6 (2010), 1533–1535
Ji Z.W., Mino H., Oto K., Akimoto R., Semiconductor Science and Technology, 24:9 (2009), 095016
Zaitsev S.V., Zh Èksper Teoret Fiz, 108:4 (2009), 644–655
Zaitsev S.V., Yakovlev D.R., Waag A., Semiconductors, 43:2 (2009), 212–217
Mino H., Kouno Y., Oto K., Muro K., Akimoto R., Takeyama S., Physica Status Solidi C, Current Topics in Solid State Physics, 6:1 (2009), 272–275
JETP Letters, 88:8 (2008), 511–514
Zaitsev S.V., Maksimov A.A., Tartakovskii I.I., Yakovlev D.R., Waag A., Semiconductors, 42:5 (2008), 540–544
Mino H., Kouno Y., Oto K., Muro K., Akimoto R., Takeyama S., Applied Physics Letters, 92:15 (2008), 153101
Ji Z.W., Takeyama S., Mino H., Oto K., Muro K., Akimoto R., Applied Physics Letters, 92:9 (2008), 093107
Zaitsev S.V., Maksimov A.A., Tartakovskii I.I., Yakovlev D.R., Bayer M., Waag A., Physical Review B, 76:3 (2007), 035312

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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