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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2006, Volume 84, Issue 4, Pages 256–260
(Mi jetpl1121)
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This article is cited in 17 scientific papers (total in 17 papers)
CONDENSED MATTER
Kinetics of indirect electron-hole recombination in a wide single quantum well in a strong electric field
V. V. Solov'eva, I. V. Kukushkina, J. H. Smetb, K. Klitzingb, W. Dietscheb a Institute of Solid State Physics, Russian Academy of Sciences
b Max-Planck-Institute fur Festkorperforschung, 70569, Stuttgart, Germany
Abstract:
The kinetics of the indirect recombination of electrons and holes in wide single quantum wells in a strong electric field has been analyzed. It has been shown that the recombination time increases exponentially up to 20 μs due to the spatial separation of oppositely charged particles. The results of a theoretical model predicting the behavior of the recombination time as a function of the applied field are in good agreement with experimental data.
Received: 24.07.2006
Citation:
V. V. Solov'ev, I. V. Kukushkin, J. H. Smet, K. Klitzing, W. Dietsche, “Kinetics of indirect electron-hole recombination in a wide single quantum well in a strong electric field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:4 (2006), 256–260; JETP Letters, 84:4 (2006), 222–225
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https://www.mathnet.ru/eng/jetpl1121 https://www.mathnet.ru/eng/jetpl/v84/i4/p256
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Abstract page: | 244 | Full-text PDF : | 72 | References: | 51 |
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