Electric dipole mechanism of the generation of electromagnetic radiation due to the spin transport in an InSb semiconductor

Conditions for the generation of electromagnetic radiation by spin-polarized electron transport through a junction made on the basis of an InSb semiconductor and an HgCr₂Se₄ or Co₂MnSb ferromagnetic material are investigated. It is shown that electromagnetic radiation from the junction appears only when the electron flow passing from the ferromagnet to the InSb semiconductor is polarized. The radiation intensity is found to depend on the direction of the external magnetic field with respect to the InSb crystal axes. Maximum intensity values are observed for the field directions corresponding to the highest probability of electric dipole spin transitions between Zeeman levels.