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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2006, Volume 84, Issue 1, Pages 29–32
(Mi jetpl1080)
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This article is cited in 3 scientific papers (total in 3 papers)
CONDENSED MATTER
Breakdown of the quantum hall effect in regularly inhomogeneous 2D electron systems
V. B. Shikin Institute of Solid State Physics, Russian Academy of Sciences
Abstract:
A breakdown mechanism is discussed for the current-voltage characteristic of the system of integer Hall channels in a 2D sample with a regularly inhomogeneous 2D electron density. It has been shown that the appearance of an external potential V on the “edges” of such strips leads to two alternatives: as V increases, the strip width decreases to zero or increases geometrically but “deteriorates qualitatively.” In both cases with their (different) thresholds, integer strips lose their properties inherent in them in the quantum Hall effect regime. These thresholds are attributed here to the asymmetric breakdown of the quantum Hall effect for the system of integer channels.
Received: 23.05.2006
Citation:
V. B. Shikin, “Breakdown of the quantum hall effect in regularly inhomogeneous 2D electron systems”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:1 (2006), 29–32; JETP Letters, 84:1 (2006), 27–30
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https://www.mathnet.ru/eng/jetpl1080 https://www.mathnet.ru/eng/jetpl/v84/i1/p29
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Abstract page: | 153 | Full-text PDF : | 54 | References: | 34 |
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