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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2006, Volume 84, Issue 1, Pages 23–28
(Mi jetpl1079)
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This article is cited in 10 scientific papers (total in 10 papers)
CONDENSED MATTER
Features of the semiconductor-metal transition in GaAs at ultrahigh pressures: New intermediate phases
V. V. Shchennikov, S. V. Ovsyannikov Institute of Metal Physics, Ural Division of the Russian Academy of Sciences
Abstract:
Using the thermopower method (Seebeck effect), the semiconductor-metal transition that occurs in gallium arsenide single crystals of n and p types at ultrahigh pressures P above ~11–18 GPa has been studied. It has been found that the transition in n-type samples begins at lower pressures. In the region of the semiconductor-metal phase transition, features have been observed on the thermopower dependences S(P). These features indicate that lattices intermediate between the initial semiconductor structure of zinc blende and the Cmcm high-pressure orthorhombic metallic phase are formed. By analogy with ZnTe, one intermediate phase (semiconductor with hole conductivity) is suggested to have the cinnabar structure and the second intermediate phase (semimetallic with electron conductivity) possibly has the SC16 structure. A model of the semiconductor-metal transition is discussed. The behavior of the thermoelectric properties in GaAs under pressure is compared with the behavior of these properties in other ANB8−N semiconductors, which also undergo the transition to the metallic state.
Received: 19.05.2006
Citation:
V. V. Shchennikov, S. V. Ovsyannikov, “Features of the semiconductor-metal transition in GaAs at ultrahigh pressures: New intermediate phases”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:1 (2006), 23–28; JETP Letters, 84:1 (2006), 21–26
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https://www.mathnet.ru/eng/jetpl1079 https://www.mathnet.ru/eng/jetpl/v84/i1/p23
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Abstract page: | 193 | Full-text PDF : | 67 | References: | 39 |
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