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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 87, Issue 9, Pages 563–567
(Mi jetpl102)
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This article is cited in 42 scientific papers (total in 42 papers)
CONDENSED MATTER
Microwave photoresistance of a double quantum well at high filling factors
A. A. Bykov, D. R. Islamov, A. V. Goran, A. I. Toropov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia
Abstract:
The effect of millimeter wave radiation on the electronic transport in a GaAs double quantum well at a temperature of 4.2 K in a magnetic field of up to 2 T has been studied. Resistance (conductance) oscillations have been shown to appear in the two-dimensional electronic system under investigation at high filling factors. The magnetic field positions of the oscillation maxima are determined by the condition ΔSAS/ħ = lωc, where ΔSAS = (E 2 − E 1) is the size quantization sublevel splitting in the quantum well, ωc is the cyclotron frequency, and l is a positive integer. It has been found that the microwave field substantially modifies the oscillations in the double quantum well, which results in alternating two-frequency oscillations of photoresistance with the inverse magnetic field.
Received: 24.03.2008
Citation:
A. A. Bykov, D. R. Islamov, A. V. Goran, A. I. Toropov, “Microwave photoresistance of a double quantum well at high filling factors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:9 (2008), 563–567; JETP Letters, 87:9 (2008), 477–481
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https://www.mathnet.ru/eng/jetpl102 https://www.mathnet.ru/eng/jetpl/v87/i9/p563
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Abstract page: | 553 | Full-text PDF : | 88 | References: | 41 |
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