New mechanism of the spin-galvanic effect

A mechanism of the spin-galvanic effect associated with spin-dependent scattering is proposed. The electrical current in a system of spin-polarized two-dimensional carriers is induced due to interference of spin-preserving scattering processes and spin relaxation processes. The spin-galvanic effect is studied for heterostructures with the Elliott-Yafet and Dyakonov-Perel spin relaxation mechanisms. The proposed contribution to the spin-galvanic current may be dominant in A₃B₅ asymmetric quantum wells.