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University proceedings. Volga region. Physical and mathematical sciences, 2009, Issue 3, Pages 133–137 (Mi ivpnz705)  
Physics

The effect of gamma-ray irradiation on the properties of GaAs-based p-n junctions

S. V. Bulyarskii, M. S. Ermakov

Ulyanovsk State University, Ulyanovsk
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Abstract: Irradiation of samples on the basis of GaAs scale in quanta with energy 1,25 MeV, were considered. It has been revealed reduction of quantity of defects in samples with an irradiation dose 0,3 Mrad. The resulted speed recombination (RSR) model was applied for the analysis of experimental data (the RSR is the physical size which returns by life time charge carriers).
Keywords: defects, scale in quanta, speed recombination, life time, charge carriers.
UDC: 621.315.592
Language: Russian
Citation: S. V. Bulyarskii, M. S. Ermakov, “The effect of gamma-ray irradiation on the properties of GaAs-based p-n junctions”, University proceedings. Volga region. Physical and mathematical sciences, 2009, no. 3, 133–137
Citation in format AMSBIB
\Bibitem{BulErm09}
\by S.~V.~Bulyarskii, M.~S.~Ermakov
\paper The effect of gamma-ray irradiation on the properties of GaAs-based p-n junctions
\jour University proceedings. Volga region. Physical and mathematical sciences
\yr 2009
\issue 3
\pages 133--137
\mathnet{http://mi.mathnet.ru/ivpnz705}
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