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University proceedings. Volga region. Physical and mathematical sciences, 2009, Issue 3, Pages 113–125
(Mi ivpnz703)
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This article is cited in 1 scientific paper (total in 1 paper)
Physics
Simulation of a radiation-stimulated current source on pin structures
I. Nagornova, E. S. Pchelintsevaa, B. M. Kostishkoa, D. A. Kornilovb, V. M. Radchenkoc, V. D. Risovanyc a Ulyanovsk State University, Ulyanovsk
b Branch of The Ulyanovsk State University in Dimitrovgrad
c Scientific-Research Institute of Atomic Reactors, Dimitrovgrad
Abstract:
The simulation and research of current generation under electron irradiation in energy range 5-40 keV based on pin diodes have been implemented in the present work. The model of the cell taking into account electron-hole pair generation by means of Si atoms ionization under electron irradiation, electron diffusion in spatial charge region, drift of charge carriers under electric field in spatial charge region, and recombination has been developed. The comparison of experimental data and calculations confirms the model reliability for average energy of electron irradiation. Besides, the measurements of voltage-current characteristic of pin-diodes under influence of beta-source based on Ni-63 (with activity range 20-40mKi) have been performed.
Keywords:
current generation, radiation induced processes, electron beam irradiation, beta-source.
Citation:
I. Nagornov, E. S. Pchelintseva, B. M. Kostishko, D. A. Kornilov, V. M. Radchenko, V. D. Risovany, “Simulation of a radiation-stimulated current source on pin structures”, University proceedings. Volga region. Physical and mathematical sciences, 2009, no. 3, 113–125
Linking options:
https://www.mathnet.ru/eng/ivpnz703 https://www.mathnet.ru/eng/ivpnz/y2009/i3/p113
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