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University proceedings. Volga region. Physical and mathematical sciences, 2011, Issue 4, Pages 119–126 (Mi ivpnz604)  
This article is cited in 1 scientific paper (total in 1 paper)

Physics

On changes in the lifetimes of charge carriers during pulsed photoexcitation in silicon with deep impurity centers

V. A. Goryunov, V. Ya. Grishaev, E. V. Nikishin

Mordovia State University namend after N. P. Ogarev, Saransk
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Abstract: The article adduces the results of numerical studies of photoconductivity kinetics in silicon with two recombination centers. It is shown that the lifetimes of charge carriers depend on the values of their equilibrium concentrations. The lifetimes increase significantly as a result of photoexcitation removal by electron emission from donor centers. This leads to the presence of electron and hole concentrations at “fast” and “slow decline” areas on the relaxation curves.
Keywords: silicon, photoconductivity kinetics, recombination centers, electron emission, lifetimes of electrons and holes.
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: V. A. Goryunov, V. Ya. Grishaev, E. V. Nikishin, “On changes in the lifetimes of charge carriers during pulsed photoexcitation in silicon with deep impurity centers”, University proceedings. Volga region. Physical and mathematical sciences, 2011, no. 4, 119–126
Citation in format AMSBIB
\Bibitem{GorGriNik11}
\by V.~A.~Goryunov, V.~Ya.~Grishaev, E.~V.~Nikishin
\paper On changes in the lifetimes of charge carriers during pulsed photoexcitation in silicon with deep impurity centers
\jour University proceedings. Volga region. Physical and mathematical sciences
\yr 2011
\issue 4
\pages 119--126
\mathnet{http://mi.mathnet.ru/ivpnz604}
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    		University proceedings. Volga region. Physical and mathematical sciences
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