On the theory of dynamic acoustically stimulated phenomena in semiconductors

The authors have obtained a general solution to the problem of transport conditions in semiconductors, taking into account the nonequilibrium electron and phonon subsystems in the field of an ultrasonic wave. The theoretical approach is based on a self-consistent consideration of the interacting subsystems behaviour: the electric field, an ultrasonic wave, the electron subsystem and the subsystem of thermal phonons. The model of thermal and acoustic phonons interaction is based on the method of Woodruff and Ehrenreich.