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University proceedings. Volga region. Physical and mathematical sciences, 2012, Issue 3, Pages 124–132 (Mi ivpnz479)  
Physics

A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics

V. V. Tregulov

Ryazan State University named after S. A. Esenin, Ryazan
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Abstract: The article introduces a way to define density of surface states in heterostructures on the frequency dependence of capacitance-voltage characteristics for a case when the charge of surface states depends on the applied dc bias. The author presents the results of research of heterostructure CdS/Si(p), carried out by a method of hydrochemical deposition.
Keywords: heterostructure, photoelectrical converter, deep levels, capacitance-voltage characteristics, surface states.
Document Type: Article
UDC: 621.383.51
Language: Russian
Citation: V. V. Tregulov, “A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics”, University proceedings. Volga region. Physical and mathematical sciences, 2012, no. 3, 124–132
Citation in format AMSBIB
\Bibitem{Tre12}
\by V.~V.~Tregulov
\paper A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics
\jour University proceedings. Volga region. Physical and mathematical sciences
\yr 2012
\issue 3
\pages 124--132
\mathnet{http://mi.mathnet.ru/ivpnz479}
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