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University proceedings. Volga region. Physical and mathematical sciences, 2012, Issue 3, Pages 124–132
(Mi ivpnz479)
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Physics
A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics
V. V. Tregulov Ryazan State University named after S. A. Esenin, Ryazan
Abstract:
The article introduces a way to define density of surface states in heterostructures on the frequency dependence of capacitance-voltage characteristics for a case when the charge of surface states depends on the applied dc bias. The author presents the results of research of heterostructure CdS/Si(p), carried out by a method of hydrochemical deposition.
Keywords:
heterostructure, photoelectrical converter, deep levels, capacitance-voltage characteristics, surface states.
Citation:
V. V. Tregulov, “A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics”, University proceedings. Volga region. Physical and mathematical sciences, 2012, no. 3, 124–132
Linking options:
https://www.mathnet.ru/eng/ivpnz479 https://www.mathnet.ru/eng/ivpnz/y2012/i3/p124
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Statistics & downloads: |
Abstract page: | 33 | Full-text PDF : | 20 | References: | 17 |
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