Modeling of a pulse radiation-induced power source

Objective: The present work considers modeling of pulse radiation-induced power source based on $^{63}$Ni isotope. Modeling has been performed in LTspice IV system in accordance with the structural chart of the pulseradiation-induced power source. Betavoltaic power source is a cell that combines 1000 silicon pin-structures with p-n-junction depth of 1.2 $\mu$m and silicon photodiodes with p-n-junction depth of 6.5 $\mu$m connected in series and in parallel with a total junction area of 1000 cm$^2$. From a designed pulse radiation-induced power source the authors have obtained an increase of the output voltage up to 1.3 V for the DC operation and an increase of the output pulse current up to 200 mA, voltage pulse up to 180 mV for the pulsed operation with the pulse duration under 2ms and repletion rate of about 800 Hz. The results demonstrate that the pulse radiation-induced power source can operate efficiently over 50 years generating current up to 200 mA at the maximum discharge. The sources can be employed for microelectromechanical systems requiring long lifetime power source able to operate in nooks and severe climates.