Models of heat-and-mass transfer processes at vapor-phase epitaxy of semiconductor layers

Background. Gas-phase epitaxy in flowing systems using organometallic compounds and hydrides (MOCVD - Metalorganic Chemical Vapor Deposition) is actively investigated in connection with a possibility of receiving nanodimensional heterostructures of the semiconductor materials A3B5 and A2B6 - prospective materials of electronic engineering. One of the factors of further development and effective scientific and production use of gas-phase epitaxy is construction and improvement of analytical models of the physical processes taking place in the semiconductor layer deposition zone. The purpose of this work is to create models of heat-and-mass processes for the MOCVD epitaxy. Materials and methods. The study suggests an analytical method of calculating the field of gas mixture flow rates, distributions of growth component and temperature profiles concentrations in the semiconductor layer deposition zone at gas-phase epitaxy using a vertical soaking drum with rotating disk-shaped substrate holder. The iterative method of averaging of the functional amendments is applied to solve the corresponding equations of convective diffusion, Navier-Stokes and heat conductivity. Results. The article presents the results of concentration and temperature profile analysis in the conditions of atmospheric and low ( 104 Pa) pressure in a soaking drum received on the basis of the offered theoretical models. The calculation results have a rather good match with the experimental data. Conclusions. The authors obtained theoretical and experimental dependences of growth component concentrations on disk-shaped substrate holder's rotation frequencies and gas-phase diffusion coefficients, as well as on distributions of temperature profiles by the disk's diameters and on the distance from its center. The presented results and calculation techniques can be used for optimization of technological processes of the MOCVD epitaxy.