Izvestiya of Saratov University. Physics
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Izv. Sarat. Univ. Physics:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Izvestiya of Saratov University. Physics, 2024, Volume 24, Issue 1, Pages 41–51
DOI: https://doi.org/10.18500/1817-3020-2024-24-1-41-51
(Mi isuph509)
 

This article is cited in 1 scientific paper (total in 1 paper)

Nanotechnologies, Nanomaterials and Metamaterials

Degradation of conductivity of low-dimensional nanostructured semiconductor layers under long-term DC current flow

L. A. Kochkurova, S. S. Volchkova, M. Yu. Vasilkova, I. A. Plugina, A. A. Klimovaa, D. A. Zimnyakovab

a Yuri Gagarin State Technical University of Saratov
b Institute of Precision Mechanics and Control, Russian Academy of Sciences
References:
Abstract: Background and Objectives: Electrically conductive layers of densely packed semiconductor nanoparticles are a promising material platform for creating, in particular, multisensor chemoresistive systems. A significant disadvantage of multielement chemoresistive sensors of this type is the long-term instability of the parameters of individual elements and large values of response and relaxation times to the initial state. Such a process can be considered as a transition "semiconductor - insulator" in dispersed disordered systems, and the dynamics of the transition can be described in the framework of the percolation theory. The aim of this work was experimental studies and statistical modeling of the effect of degradation of ohmic conductivity of low-dimensional layers of densely packed indium oxide (In$_2$O$_3$) nanoparticles under long-term DC current flow. Dispersed nanostructured layers of indium oxide were chosen as an object of study due to the specific electrophysical properties of this indirect-gap n-type semiconductor. Materials and Methods: Experimental studies of the effect of degradation of ohmic conductivity of dispersed semiconductor structures under long-term exposure to direct current were carried out using specially prepared samples consisting of densely packed indium oxide nanoparticles (In$_2$O$_3$). The effect of structure thickness on the percolation threshold as well as the critical index of the conductivity function was numerically investigated. A cubic resistor network was considered for numerical analysis of the conductivity of a two-phase percolation structure. The network was uniformly and randomly filled with conducting and insulating nodes. Results: One of the main observed features of electron transfer in bridge disordered ensembles of nanoparticles of the studied systems is the achievement of percolation threshold at long-term exposure to direct current and extremely low rate of recovery of deteriorated conductivity after removal of exposure. The established value of the critical conductivity index for the studied structures has an intermediate value between theoretical estimates for three-dimensional and two-dimensional percolation systems, which allows us to consider the studied structures as transitional between two-dimensional and three-dimensional systems. Conclusion: The obtained results can be used as a physical basis for the development of new approaches to the creation of thin structures with limited conductivity.
Keywords: conductivity, nanoparticles, inter-electrode bridges, percolation threshold, critical exponent, indium oxide.
Funding agency Grant number
Russian Science Foundation 22-29-00612
This work was supported by the Russian Science Foundation (project No. 22-29-00612).
Received: 28.10.2023
Bibliographic databases:
Document Type: Article
UDC: 537.311.322
Language: Russian
Citation: L. A. Kochkurov, S. S. Volchkov, M. Yu. Vasilkov, I. A. Plugin, A. A. Klimova, D. A. Zimnyakov, “Degradation of conductivity of low-dimensional nanostructured semiconductor layers under long-term DC current flow”, Izv. Sarat. Univ. Physics, 24:1 (2024), 41–51
Citation in format AMSBIB
\Bibitem{KocVolVas24}
\by L.~A.~Kochkurov, S.~S.~Volchkov, M.~Yu.~Vasilkov, I.~A.~Plugin, A.~A.~Klimova, D.~A.~Zimnyakov
\paper Degradation of conductivity of low-dimensional nanostructured semiconductor layers under long-term DC current flow
\jour Izv. Sarat. Univ. Physics
\yr 2024
\vol 24
\issue 1
\pages 41--51
\mathnet{http://mi.mathnet.ru/isuph509}
\crossref{https://doi.org/10.18500/1817-3020-2024-24-1-41-51}
\edn{https://elibrary.ru/AUQNBD}
Linking options:
  • https://www.mathnet.ru/eng/isuph509
  • https://www.mathnet.ru/eng/isuph/v24/i1/p41
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Izvestiya of Saratov University. Physics
    Statistics & downloads:
    Abstract page:31
    Full-text PDF :17
    References:13
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024