|
Physics
Research of the contact pads topology influence on the parameters reproducibility of the current oscillations in mesa-planar structures based on semi-insulatinggallium arsenide
I. O. Kozhevnikov, A. I. Mikhailov, D. N. Bratashov Saratov State University
Abstract:
Experimental results of research the influence of the electric field distribution between the pads of mesa-planar resistor structures based on semi-insulating n-GaAs are represented. These influence by changing pads topology (plane-parallel, flat-pointed, counter-pointed and concave-pointed) was studied for the current oscillations parameters (the threshold voltage, frequency and amplitude of current oscillations) reproducibility increasing. It was found that the structures with counter-pointed topology metal sites improves the concentration of the electric field at the tip and a narrows the field of current flow, has a highest reproducibility of parameters such as the magnitude of the current oscillations occurrence threshold voltage and the amplitude of oscillation. For structures with a plane-parallel contact form reproducibility of experimental measurements is the smallest due to the high influence of edge effects.
Keywords:
semi-insulating gallium arsenide, recombination current instability, functional electronics.
Citation:
I. O. Kozhevnikov, A. I. Mikhailov, D. N. Bratashov, “Research of the contact pads topology influence on the parameters reproducibility of the current oscillations in mesa-planar structures based on semi-insulatinggallium arsenide”, Izv. Sarat. Univ. Physics, 15:1 (2015), 51–56
Linking options:
https://www.mathnet.ru/eng/isuph398 https://www.mathnet.ru/eng/isuph/v15/i1/p51
|
Statistics & downloads: |
Abstract page: | 48 | Full-text PDF : | 8 | References: | 12 |
|