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Izvestiya of Saratov University. Physics, 2019, Volume 19, Issue 4, Pages 312–316
DOI: https://doi.org/10.18500/1817-3020-2019-19-4-312-316 (Mi isuph361) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Brief Communications

Nanostructured porous silicon layers formation at low doses of $\gamma$-radiation

O. Ya. Belobrovayaa, V. V. Galushkaa, A. L. Karagaychevb, A. E. Zharkovaa, V. P. Polyanskayaa, V. I. Sidorova, D. V. Terina, A. A. Mantsurova

a Saratov State University, 83 Astrakhanskaya St., Saratov 410012, Russia
b State Health Institution “Regional Clinical Oncology Dispensary”, Saratov 410001, Russia
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DOI: https://doi.org/10.18500/1817-3020-2019-19-4-312-316
Abstract: We present results of experimental study of nanoporous Si (SiNÐ) structure formation by using the method of metal-stimulated chemical etching upon irradiation with small doses of $\gamma$-radiation directly in the process of production (in situ). It is shown that the radiation leads to an increase of the crystallization of SiNP structures obtained on previously irradiated substrates. Apparently, this can be explained by a decrease in the initial defectiveness of the silicon substrate due to irradiation with small doses of $\gamma$-radiation.
Keywords: porous silicon, metal-stimulated chemical etching, nanostructures, X-ray diffractometry, morphology, in situ, $\gamma$-irradiation, radiation dose, microstresses, scanning electron microscope, pores, crystallite size, control, in situ.
Funding agency Grant number
Russian Foundation for Basic Research 18-07-00752
This work was supported by the Russian Foundation for Basic Research (project No. 18-07-00752).
Document Type: Article
UDC: 535.375.5:537.533.35:539.23:54-7
Language: English
Citation: O. Ya. Belobrovaya, V. V. Galushka, A. L. Karagaychev, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, D. V. Terin, A. A. Mantsurov, “Nanostructured porous silicon layers formation at low doses of $\gamma$-radiation”, Izv. Sarat. Univ. Physics, 19:4 (2019), 312–316
Citation in format AMSBIB
\Bibitem{BelGalKar19}
\by O.~Ya.~Belobrovaya, V.~V.~Galushka, A.~L.~Karagaychev, A.~E.~Zharkova, V.~P.~Polyanskaya, V.~I.~Sidorov, D.~V.~Terin, A.~A.~Mantsurov
\paper Nanostructured porous silicon layers formation at low doses of $\gamma$-radiation
\jour Izv. Sarat. Univ. Physics
\yr 2019
\vol 19
\issue 4
\pages 312--316
\mathnet{http://mi.mathnet.ru/isuph361}
\crossref{https://doi.org/10.18500/1817-3020-2019-19-4-312-316}
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    • This publication is cited in the following 1 articles:
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    		Izvestiya of Saratov University. Physics
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