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Izvestiya of Saratov University. Physics, 2015, Volume 15, Issue 2, Pages 18–31 (Mi isuph229)  
This article is cited in 2 scientific papers (total in 2 papers)

Physics

Nonequilibrium the microwave plasma of low pressure in scientific researches and development micro and nanoelectronics

R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
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Abstract: Advantages and benefits realization use of nanotechnology of high ionized low-energy microwave plasma of low pressure are described. It presents the fact that one installation on the basis of microwave plasma can replace up 4 to 5 installations with usual high-frequency excitation of the gas discharge.
Keywords: vacuum-plasma process equipment, nanotechnology, low pressure microwave plasma, surface structure of silicon, microwave plasma-chemical etching, quantum-dimensional systems.
Document Type: Article
UDC: 533.9
Language: Russian
Citation: R. K. Yafarov, “Nonequilibrium the microwave plasma of low pressure in scientific researches and development micro and nanoelectronics”, Izv. Sarat. Univ. Physics, 15:2 (2015), 18–31
Citation in format AMSBIB
\Bibitem{Yaf15}
\by R.~K.~Yafarov
\paper Nonequilibrium the microwave plasma of low pressure in scientific researches and development micro and nanoelectronics
\jour Izv. Sarat. Univ. Physics
\yr 2015
\vol 15
\issue 2
\pages 18--31
\mathnet{http://mi.mathnet.ru/isuph229}
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  • https://www.mathnet.ru/eng/isuph/v15/i2/p18
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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