Investigation of the defect distribution gradient in single-crystal silicon and gallium arsenide plates using x-ray topography

The current paper investigates the dependence of diffusion scattering on the density of structural imperfections in single-crystal silicon and gallium arsenide, which allows for the estimation of the concentration gradient of structural imperfections. This gradient appears due to the properties of the growth technology of such crystals (via the Czochralski method), namely, the inhomogeneity of the crystallization front, which leads to the formation of regions with a high dislocation density. One of the most important technological requirements is the uniformity of such crystals in order to ensure their most effective further electronics use. The proposed research method allows for prompt identification of an increase in the gradient so that one can then adjust the technological parameters of growth in order to avoid deterioration of product quality.