Determining the orientation of a single crystal by analyzing the indentation geometry

he current study discusses the development of a technique for determining the crystallographic orientation of a single crystal. Single crystals of gallium arsenide grown by the Czochralski method in the crystallographic direction of <100> were used as the subject of research. The study describes classical approaches to the determination of plane indices using selective etching (based on the shapes of etch pits) and X-ray diffraction analysis. It also presents the results of experimental studies of single crystals of orientation <100>, aimed at detecting the planes of the {110} family, which are the planes of the primary flat. The authors analyze the processes of formation of microcracks that occur during standard tests for the determination of microhardness and demonstrate the regular nature of their propagation over the surface.