Features of emission in nanograin structure of semiconductors

The experimental study and theoretical analysis of the possible mechanisms of field emission in the nanograin structure of the most widely used semiconductors (Si, GaAs, InAs, InSb) are carried out in this work. A model scheme of electronic processes is proposed. The parameters of the electronic spectrum of the structures studied are calculated. Qualitative and quantitative agreement of the experimental results with a theoretical estimate is obtained, which confirms the legitimacy of the formulated model representations. The carried out research allows asserting that emitters on the basis of narrow-band semiconductors. А$_3$В$_5$ are much more effective than those based on metals, carbon, silicon.