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Preprints of the Keldysh Institute of Applied Mathematics, 2022, 045, 15 pp.
DOI: https://doi.org/10.20948/prepr-2022-45
(Mi ipmp3071)
 

Simulation of strongly photoionized silicon plasma

I. Yu. Vichev
References:
Abstract: The work demonstrates the process of simulation a strongly photoionized silicon plasma with parameters close to astrophysical. The calculations were carried out within the model of collisional-radiative equilibrium. The obtained results were verified by comparison with the results of other participants of the codes comparison workshop. A comparative analysis of the results with the experimentally measured spectrum of soft X-ray transmission through a layer of photoionized silicon plasma is carried out.
Keywords: collisional-radiative model, photoionized plasma, transmission spectrum.
Funding agency Grant number
Russian Foundation for Basic Research 20-01-00485
Document Type: Preprint
Language: Russian
Citation: I. Yu. Vichev, “Simulation of strongly photoionized silicon plasma”, Keldysh Institute preprints, 2022, 045, 15 pp.
Citation in format AMSBIB
\Bibitem{Vic22}
\by I.~Yu.~Vichev
\paper Simulation of strongly photoionized silicon plasma
\jour Keldysh Institute preprints
\yr 2022
\papernumber 045
\totalpages 15
\mathnet{http://mi.mathnet.ru/ipmp3071}
\crossref{https://doi.org/10.20948/prepr-2022-45}
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  • https://www.mathnet.ru/eng/ipmp/y2022/p45
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    Препринты Института прикладной математики им. М. В. Келдыша РАН
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