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Preprints of the Keldysh Institute of Applied Mathematics, 2018, 099, 12 pp.
DOI: https://doi.org/10.20948/prepr-2018-99 (Mi ipmp2459) 		 
Mathematical model of radiation heating of microelectronic device

Yu. A. Volkov, K. K. Inozemtseva, M. B. Markov, I. A. Tarakanov
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DOI: https://doi.org/10.20948/prepr-2018-99
Abstract: Radiation heating of a semiconductor crystal is considered. A model is constructed for transferring energy to the crystal by excess charge carriers, which are formed during the scattering of ionizing radiation. The energy distribution lost by the incident radiation in the crystal is calculated between the conduction electrons and phonons of the crystal lattice.
Keywords: ionizing radiation, charge carrier, phonon.
Funding agency Grant number
Russian Foundation for Basic Research 17-01-00301_а
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Document Type: Preprint
Language: Russian
Citation: Yu. A. Volkov, K. K. Inozemtseva, M. B. Markov, I. A. Tarakanov, “Mathematical model of radiation heating of microelectronic device”, Keldysh Institute preprints, 2018, 099, 12 pp.
Citation in format AMSBIB
\Bibitem{VolInoMar18}
\by Yu.~A.~Volkov, K.~K.~Inozemtseva, M.~B.~Markov, I.~A.~Tarakanov
\paper Mathematical model of radiation heating of microelectronic device
\jour Keldysh Institute preprints
\yr 2018
\papernumber 099
\totalpages 12
\mathnet{http://mi.mathnet.ru/ipmp2459}
\crossref{https://doi.org/10.20948/prepr-2018-99}
\elib{https://elibrary.ru/item.asp?id=34923970}
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    		Препринты Института прикладной математики им. М. В. Келдыша РАН
     
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