Solution of stochastic analog equation during non-equilibrium stage of phase transition and silicon carbide porosity

The porosity in the thin layer sample consisting of silicon carbide and metal occurs when radiation damages the crystal lattice. Vacancy-gas defects (VGDs) are formed during the phase transition, whose model is presented clustering VGDs nuclei and Brownian motion of clusters. The Ito stochastic equations system for VGDs trajectories solved using stable numerical methods and distribution functions (DFs) of sizes in the Cartesian coordinates of the lattice studied as well as local stresses in the layer of silicon carbide, due to porosity evaluated.