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Preprints of the Keldysh Institute of Applied Mathematics, 1997, 069 (Mi ipmp1456)  
Formation of Dissipative Structures in Boron-Implanted Silicon

G. G. Malinetskii, A. B. Potapov, M. G. Stepanova
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Abstract: Starting from the principles of the general theory of self- organization, the formation of dissipative structures as found experimentally in annealed samples of boron-implanted silicon is explained. A qualitative 'reaction-diffusion' model is developed which reproduces the formation of spatially ordered boron dopant distribution in the form of equidistant maxima. Perspectives of more exact quantitative models describing the extraordinary evolution of boron dopant in silicon are discussed.
Document Type: Preprint
Language: Russian
Citation: G. G. Malinetskii, A. B. Potapov, M. G. Stepanova, “Formation of Dissipative Structures in Boron-Implanted Silicon”, Keldysh Institute preprints, 1997, 069
Citation in format AMSBIB
\Bibitem{MalPotSte97}
\by G.~G.~Malinetskii, A.~B.~Potapov, M.~G.~Stepanova
\paper Formation of Dissipative Structures in Boron-Implanted Silicon
\jour Keldysh Institute preprints
\yr 1997
\papernumber 069
\mathnet{http://mi.mathnet.ru/ipmp1456}
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    		Препринты Института прикладной математики им. М. В. Келдыша РАН
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