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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductors
Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates
D. L. Alfimovaa, L. S. Lunina, M. L. Luninaa, A. S. Pashchenkoa, S. N. Chebotarevab a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Rostov oblast, Russia
Abstract:
The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga–In–P–Sb–As system have been analyzed in the framework of the regular solution model. The kinetics of the growth, the composition, the structural perfection, and the luminescence properties of Ga$_{z}$In$_{1-z}$P$_{x}$Sb$_{y}$As$_{1-x-y}$/InAs isoperiodic heterostructures have been investigated.
Received: 16.02.2016
Citation:
D. L. Alfimova, L. S. Lunin, M. L. Lunina, A. S. Pashchenko, S. N. Chebotarev, “Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates”, Fizika Tverdogo Tela, 58:9 (2016), 1695–1700; Phys. Solid State, 58:9 (2016), 1751–1757
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https://www.mathnet.ru/eng/ftt9845 https://www.mathnet.ru/eng/ftt/v58/i9/p1695
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